mako semiconductor co., ltd sot-23 plastic-encapsulate d l r g h v BZX84c2v4-BZX84c43 zener diode features z planar die construction z 30 0mw power dissipation z zener voltages from 2.4v - 43v z ultra-small surface mount package power d issipation maximum ratings (t a =25 unless otherwise specified ) characteristic symbol value unit f o r w a r d v o l tage (note 2) @ i f = 1 0 ma v f 0.9 v powe r dissip ation(note 1) p d 300 mw thermal resistance from junction to ambient r ja 417 / w junction t emper ature t j 150 sot-23 storage t emperature range t stg -55~ +150 makosemiconductor 1du m a k o s e m i c o n d u c t o r
notes: 1. valid provided that device te rminals are kept at ambient temperature. 2. tested with pulses, period=5ms,pulse width =300 s. 3. f = 1 kh z . z enerv oltage range (note 2) maximum zener impedance (note 3) maximum reverse current v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r t e mperature coefficent of zener voltage @ i zt =5 m a mv/c t y pe number code nom(v) min(v) max(v) (ma) ( ? ) (ma) ( a) (v) min max b z x84c2v4 z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 b z x84c2v7 z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 b z x84c3v0 z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 b z x84c3v3 z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 b z x84c3v6 z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 b z x84c3v9 z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 b z x84c4v3 z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 b z x84c4v7 z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 b z x84c5v1 z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 b z x84c5v6 z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 b z x84c6v2 z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 b z x84c6v8 z5 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 b z x84c7v5 z6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 b z x84c8v2 z7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 b z x84c9v1 z8 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 b z x84c10 z9 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 b z x84c11 y1 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 b z x84c12 y2 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 b z x84c13 y3 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 b z x84c15 y4 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 b z x84c16 y5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 b z x84c18 y6 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 b z x84c20 y7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 b z x84c22 y8 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 b z x84c24 y9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 b z x84c27 y10 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 b z x84c30 y11 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 b z x84c33 y12 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 b z x84c36 y13 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 b z x84c39 y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 BZX84c43 y15 43 40.0 46.0 2 100 700 1 0.1 32 10 12 makosemiconductor 2du0 electrical characteristics t a =2 5 unless otherwise specified m a k o s e m i c o n d u c t o r
12345 67891011 1 10 100 11 01 0 0 1 10 100 1000 10 15 20 25 30 35 40 45 50 1 10 100 0 4 8 12 16 20 24 28 32 36 40 44 -5 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 1 10 100 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 1e-4 1e-3 0.01 0.1 1 10 100 0.5 6 . 2 5 . 6 5 . 1 2 . 4 4 . 7 6 . 8 7 . 5 8 . 2 9 . 1 1 0 p d =300mw t a =25 pulsed 0.5 ze ner characteristics ( v z up to 10 v ) i z , zener current (ma) v z , ze ner voltage (v) t a =25 f=1m hz bias at 50% o f v z nom 1v bias 0v bias ty pical capacitance v z , nom inal zener voltage (v) c, capacit ance ( pf) 4 3 1 6 p d =300mw ze ner characteristics ( 11 v t o 43 v ) i z , zener current (ma) v z , z e ner voltage (v) t a =25 pulsed 1 1 1 2 2 4 1 3 1 5 1 8 3 0 3 3 3 9 3 6 2 0 2 2 2 7 v z @ i zt ty p ical t a values f o r BZX84cxxx series t em perature coefficients vz , t e mperature coefficient (mv/ ) v z , nom inal zener voltage (v) p o wer derating curve po wer dissipat ion p d (mw) am bient temperature t a ( ) i z =5m a ef f ect of zener voltage on zener impedance i z =1m a t a =25 i z(ac ) =0.1i z(dc) f=1k hz v z , nom inal zener voltage (v) z zt , dynamic impedance( ? ) puls ed t y pical leakage current i r , leakag e current ( ua) v z , nom inal zener voltage (v) t a =25 t a =100 electrical characteristics mako semiconductor 3 d, aug,2014 m a k o s e m i c o n d u c t o r
makosemiconductor 4du mi n m ax min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 6 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ m a k o s e m i c o n d u c t o r
makosemiconductor 5du m a k o s e m i c o n d u c t o r
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